High current IGBT modules

Santa Clara, Calif. —A new series of 1,200 V IGBT modules has current ranges from 75 to 300 A per IGBT with companion FRED diode having the same ratings. Each module is suitable for PWM operation up to 30 kHz. Module series comes in three circuit topologies: dual IBVT half-bridge (MII); boost configuration (MID); and buck configuration (MDI).

By Staff November 1, 1998

Santa Clara, Calif. —A new series of 1,200 V IGBT modules has current ranges from 75 to 300 A per IGBT with companion FRED diode having the same ratings. Each module is suitable for PWM operation up to 30 kHz. Module series comes in three circuit topologies: dual IBVT half-bridge (MII); boost configuration (MID); and buck configuration (MDI). Direct Copper Bond (DCB) construction is combined with Non-Punch Through (NPT) IGBTs. The power transisters and FRED diodes are soldered directly to the DCB substrate. As thermal expansion coefficients of silicon and DCB are similar, mechanical stresses caused by power semiconductor chips heating and cooling are reduced to a minimum.

IXYS Corp.